si2307ds vishay siliconix document number: 70843 s-60570erev. a, 16-nov-98 www.vishay.com faxback 408-970-5600 2-1 p-channel 30-v (d-s) mosfet
v ds (v) r ds(on) ( ) i d (a) 30 0.080 @ v gs = 10 v 3 30 0.140 @ v gs = 4.5 v 2 g to-236 (sot-23) s d top view 2 3 1 si2307ds (a7)* *marking code
parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a, b t a = 25 c i d 3 a continuous drain current (t j = 150 c) a , b t a = 70 c i d 2.5 a pulsed drain current i dm 12 a continuous source current (diode conduction) a, b i s 1.25 power dissipation a, b t a = 25 c p d 1.25 w power dissipation a , b t a = 70 c p d 0.8 w operating junction and storage temperature range t j , t stg 55 to 150 c
parameter symbol typical maximum unit maximum junction - to - ambient a t 5 sec r thja 100 c/w m ax i mum j unc ti on- t o- a m bi en t a steady state r thja 130 c/w notes a. surface mounted on fr4 board. b. t 5 sec.
si2307ds vishay siliconix www.vishay.com faxback 408-970-5600 2-2 document number: 70843 s-60570erev. a, 16-nov-98
limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 10 a 30 v gate-threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 24 v, v gs = 0 v 1 a z ero g a t e v o lt age d ra i n c urren t i dss t j = 55 c 10 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 6 a drain source on resistance a r ds( ) v gs = 10 v, i d = 3 a 0.064 0.080 drain-source on-resistance a r ds(on) v gs = 4.5 v, i d = 2.5 a 0.103 0.140 forward transconductance a g fs v ds = 10v, i d = 3 a 4.5 s diode forward voltage v sd i s = 1.25 a, v gs = 0 v 1.2 v dynamic b total gate charge q g v 15v v 10v 10 15 c gate-source charge q gs v ds = 15 v, v gs = 10 v i d 3 a 1.9 nc gate-drain charge q gd i d 3 a 2 input capacitance c iss v15vv0f1mh 565 f output capacitance c oss v ds = 15 v, v gs = 0, f = 1 mhz 126 pf reverse transfer capacitance c rss 75 switching b turn - on t ime t d(on) v15vr15 10 20 turn - on t ime t r v dd = 15 v, r l = 15 i d 1.0 a, v gen = 10 v 9 20 ns turn - of f time t d(off) i d 1 . 0 a , v gen = 10 v r g = 6 27 50 ns turn - of f t ime t f 7 16 notes a. pulse test: pw 300 s duty cycle 2%. b. for design aid only, not subject to production testing. c. switching time is essentially independent of operating temperature.
si2307ds vishay siliconix document number: 70843 s-60570erev. a, 16-nov-98 www.vishay.com faxback 408-970-5600 2-3
0 2 4 6 8 10 12 0246810 on-resistance vs. drain current output characteristics transfer characteristics v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d 0 2 4 6 8 10 12 012345 t c = 55 c 125 c 3 v 4 v 0 100 200 300 400 500 600 700 800 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 50 0 50 100 150 0 2 4 6 8 10 0246810 0 0.2 0.4 0.6 0246810 gate charge gate-to-source voltage (v) q g total gate charge (nc) v ds drain-to-source voltage (v) c capacitance (pf) v gs c rss c oss c iss v ds = 15 v i d = 3 a on-resistance ( r ds(on) ) i d drain current (a) capacitance on-resistance vs. junction temperature v gs = 10 v i d = 3 a t j junction temperature ( c) (normalized) on-resistance r ds(on) v gs = 10 v v gs = 4.5 v 25 c v gs = 10 thru 5 v
si2307ds vishay siliconix www.vishay.com faxback 408-970-5600 2-4 document number: 70843 s-60570erev. a, 16-nov-98
0.01 0.10 1.00 0.01 0 1 8 12 2 6 10 500 0.1 10 100 0.1 1.0 10.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 power (w) 0.4 0.2 0.0 0.2 0.4 0.6 50 25 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 0246810 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance v sd source-to-drain voltage (v) v gs gate-to-source voltage (v) source current (a) i s t j temperature ( c) time (sec) variance (v) v gs(th) i d = 3 a i d = 250 a t a = 25 c single pulse t j = 25 c t j = 150 c 2 10 3 10 2 1 10 500 10 1 10 4 100 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 on-resistance ( r ds(on) ) 1. duty cycle, d = 2. per unit base = r thja = 130 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 4
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